Published March 15, 1999
| Version v1
Journal article
Study of local heat dissipation in semiconductor devices by thermally modulated atomic force microscopy
- 1. Fakultaet fuer Physik und Astronomie, Festkoerperspektroskopie, Ruhr-Universitaet Bochum, D-44780 Bochum (Germany)
- 2. Fakultaet fuer Physik und Astronomie, Angewandte Physik, Ruhr-Universitaet Bochum, D-44780 Bochum (Germany)
Description
The local heat dissipation in semiconductor devices were investigated by means of a thermally modulated scanning thermoelastic microscope (STEM). The temperature induced thermal expansion and the topographic information are measured simultaneously. The spatial resolution of the constructed microscope is better than 50 nm. Heat spots of the semiconducting devices are visualised by heating with a modulated voltage
Additional details
Identifiers
- DOI
- 10.1063/1.58030;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 463
- Journal Issue
- 1
- Journal Page Range
- p. 152-154
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 10. International conference on photoacoustic and photothermal phenomena
- Dates
- 23-27 Aug 1998
- Place
- Rome (Italy)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40075791
- Subject category
- S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; COOLING; ELECTRIC POTENTIAL; HEAT; HEAT TRANSFER; HEATING; MICROSCOPES; PHOTOACOUSTIC SPECTROSCOPY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SPATIAL RESOLUTION; THERMAL EXPANSION; THERMOELASTICITY
- Descriptors DEC
- ELASTICITY; ENERGY; ENERGY TRANSFER; EXPANSION; MATERIALS; MECHANICAL PROPERTIES; MICROSCOPY; RESOLUTION; SPECTROSCOPY
Optional Information
- Notes
- (c) 1999 American Institute of Physics.