Published October 21, 2009 | Version v1
Journal article

Study of radiation damage induced by 82 MeV protons on multi-pixel Geiger-mode avalanche photodiodes

  • 1. Institute for Nuclear Research RAS, pr. 60-letiya Oktyabrya 7a, 117312 Moscow (Russian Federation)
  • 2. Department of Physics, Northeastern University, Boston, MA 02115 (United States)
  • 3. Paul Scherrer Institute, Villigen (Switzerland)

Description

Results from a study on the radiation hardness of multi-pixel Geiger-mode avalanche photodiodes (G-APDs) are presented. Recently developed G-APDs from five manufacturers (Hamamatsu (Japan), CPTA/Photonique (Russia/Switzerland), Zecotek (Singapore), Pulsar (Russia) and FBK-IRST (Italy)) were exposed to 82 MeV protons at fluences up to 1010 protons/cm2 at the Paul Scherrer Institute. The G-APD's main parameters were measured before and after irradiation. The effects of the proton radiation on breakdown voltage, quenching resistance value, gain, photon detection efficiency, dark current and dark count rate for these devices are shown and discussed.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2009.05.052

Additional details

Identifiers

DOI
10.1016/j.nima.2009.05.052;
PII
S0168-9002(09)01035-3;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
610
Journal Issue
1
Journal Page Range
p. 87-92
ISSN
0168-9002
CODEN
NIMAER

Conference

Title
5. international conference on new developments in photodetection
Acronym
NDIP08
Dates
15-20 Jun 2008
Place
Aix-les-Bains (France)

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.