Published August 2021 | Version v1
Journal article

Electronic structure and magnetic properties of Dy-doped Bi2Te3

  • 1. Institute of Physics, Czech Academy of Sciences, Na Slovance 2, Prague 8 (Czech Republic)

Description

Highlights: • Electronic and magnetic character, and the magnetic anisotropy in the rare earth based materials are investigated. • DFT+U+HIA method accurately describes the spin and orbital magnetic moments, and the magnetic anisotropy for SmCo5. • The method is applied to theoretical investigation of Dy-doped Bi2Te3 topological insulator, and the positive magnetic anisotropy is predicted. • The experimental resonant photoemission spectra of Dy-doped Bi2Te3 are well reproduced by the calculations. -- Abstract: The electronic and magnetic character, and the magnetic anisotropy in practically important magnetic materials containing the rare earth elements are investigated making use of the correlated band theory implemented as a combination of the relativistic density functional theory with the Anderson impurity model (DFT+U+HIA). First, we demonstrate that DFT+U+HIA provides a good description of the electronic structure, spin and orbital magnetic moments, and the magnetic anisotropy for SmCo5 magnet with 4f5-like Sm3+ shell. Further, the method is applied to theoretical investigation of Dy-doped Bi2Te3 topological insulator. For both ferro- and anti-ferromagnetic Dy-planes in Bi2Te3 we found the in-gap flat f-bands located at the top of the valence band of Bi2Te3. The positive uniaxial MAE is predicted for (DyxBi1−x)2Te3 with x = 0.33. The experimental resonant photoemission spectra are well reproduced by the calculations. These studies can be important to explore the potential use of rare-earth doped topological insulators in the low-power spintronic devises.

Additional details

Identifiers

DOI
10.1016/j.jallcom.2021.159709;
PII
S092583882101118X;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
872
Journal Page Range
vp.
ISSN
0925-8388
CODEN
JALCEU

Optional Information

Copyright
Copyright (c) 2021 Elsevier B.V. All rights reserved.