Published 2006
| Version v1
Miscellaneous
Electronic and structural properties of double-wall carbon nano tubes
Creators
- 1. Razi University, Physics Department, Kermanshah (Iran, Islamic Republic of)
Description
We study the electronic and structural properties of a (5,5)at(10,10) double-wall carbon nanotube using the tight-binding model. We found the interwall interaction could lead to a metal to semiconductor phase transitions. This is done by switching hopping between double wall carbon nanotube layers. The calculated density of states illustrate a semiconductor gap for this case.
Availability note (English)
Available from Atomic Energy Organization of IranAdditional details
Additional titles
- Original title (Persian)
- Khavas-e sakhtari va elektoroni-e Karbon-e nano lule-haye do divare
Publishing Information
- Publisher
- The Physical Society of Iran
- Imprint Place
- Tehran, On (Iran, Islamic Republic of)
- Imprint Pagination
- [3 p.]
Conference
- Title
- The Annual Physics Conference of Iran
- Original Conference Title
- Konferanse Phizike Iran
- Dates
- 28-31 Aug 2006
- Place
- Shahroud (Iran, Islamic Republic of)
INIS
- Country of Publication
- Iran, Islamic Republic of
- Country of Input or Organization
- Iran, Islamic Republic of
- INIS RN
- 43004864
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- CARBON; ELECTRONS; ENERGY-LEVEL DENSITY; GREEN FUNCTION; HAMILTONIANS; INTERACTIONS; LAYERS; NANOTUBES; PHASE TRANSFORMATIONS; SUPERCONDUCTIVITY
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FUNCTIONS; LEPTONS; MATHEMATICAL OPERATORS; NANOSTRUCTURES; NONMETALS; PHYSICAL PROPERTIES; QUANTUM OPERATORS