Published September 2018
| Version v1
Journal article
Ionizing radiation effects on the thermal stability of deuterium trapping in reaction bonded SiC
- 1. Laboratorio Nacional de Fusión, CIEMAT, 28040 Madrid (Spain)
- 2. Centro de Micro-Análisis de Materiales-UAM, Cantoblanco, 28049 Madrid (Spain)
Description
Highlights: • Ionizing radiation increases the deuterium absorption. • Deuterium release enhancement due to ionizing radiation. • Displacement damage resulting in an increment of formation of Si–D bonds.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jnucmat.2018.05.053Additional details
Identifiers
- DOI
- 10.1016/j.jnucmat.2018.05.053;
- PII
- S0022311517316835;
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 508
- Journal Page Range
- p. 219-225
- ISSN
- 0022-3115
- CODEN
- JNUMAM
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49103157
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; DAMAGE; DESORPTION; DEUTERIUM; IONIZATION; IONIZING RADIATIONS; IRRADIATION; RADIATION EFFECTS; SILICON CARBIDES; TRAPPING
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; HYDROGEN ISOTOPES; ISOTOPES; LIGHT NUCLEI; NUCLEI; ODD-ODD NUCLEI; RADIATIONS; SILICON COMPOUNDS; SORPTION; STABLE ISOTOPES
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.