Neutron-induced soft errors in CMOS circuits

The subject of this thesis is a systematic study of soft errors occurring in CMOS integrated circuits when being exposed to radiation. The vast majority of commercial circuits operate in the natural environment ranging from the sea level to aircraft flight altitudes (less than 20 km), where the errors are caused mainly by interaction of atmospheric neutrons with silicon. Initially, the soft error rate (SER) of a static memory was measured for supply voltages from 2V to 5V when irradiated by 14 MeV and 100 MeV neutrons. Increased error rate due to the decreased supply voltage has been identified as a potential hazard for operation of future low-voltage circuits. A novel methodology was proposed for accurate SER characterization of a manufacturing process and it was validated by measurements on a 0.6 μm process and 100 MeV neutrons. The methodology can be applied to the prediction of SER in the natural environment