High resolution electron microscopy of defects in annealing silicon single crystals doped with germanium

Investigation into silicon after annealing at 450 and 1000 deg C temperatures as well as into germanium addition effect on silicon isolation in crystals is conducted by the method of transmitting electron microscopy of high resolution. Precipitations which enlarge with time interval increase are observed in pure silicon after heat treatment at 1000 deg C. In silicon with germanium amorphous lamellar precipitations as well as octahedral ones which appear to be silicon oxide modifications are detected. A conslusion is drawn that germanium effects solid solution decomposition kinetics