Published May 21, 2008 | Version v1
Journal article

Electrical responses by effects of molecular adsorption on channel and junctions of carbon nanotube field effect transistors

  • 1. Materials and Devices Lab, Samsung Advanced Institute of Technology Yongin (Korea, Republic of)
  • 2. Department of Electronics and Computer Engineering, Hanyang University, Seoul (Korea, Republic of)

Description

We report the adsorption effect on the electrical transport of nanotube field effect transistors. The source-drain current is monitored separately for the nanotube channel and the metal-nanotube junction under different pressures of ambient air with a blocking passivation. The metal-nanotube junction shows a significant change from p-type to ambipolar upon vacuum pumping, while the nanotube channel changes modestly. The metal-nanotube junction is found to be far more sensitive to the environment than the nanotube channel. We suggest that the adsorption states underneath the blocking layer do not desorb, and thus the positive carriers would not be diluted upon the vacuum pumping. This result is interpreted as the formation of an i-p-i and p-i-p junction with charge transfer by oxygen molecules. (fast track communication)

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/41/10/102007

Additional details

Identifiers

DOI
10.1088/0022-3727/41/10/102007;
PII
S0022-3727(08)72637-8;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
41
Journal Issue
10
Journal Page Range
[5 p.]
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40037145
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ADSORPTION; AIR; CARBON; CHARGE CARRIERS; CHARGED-PARTICLE TRANSPORT; DEPLETION LAYER; FIELD EFFECT TRANSISTORS; METALS; NANOTUBES; OXYGEN; PASSIVATION
Descriptors DEC
ELEMENTS; FLUIDS; GASES; LAYERS; NANOSTRUCTURES; NONMETALS; RADIATION TRANSPORT; SEMICONDUCTOR DEVICES; SORPTION; TRANSISTORS