Electrical responses by effects of molecular adsorption on channel and junctions of carbon nanotube field effect transistors
Creators
- 1. Materials and Devices Lab, Samsung Advanced Institute of Technology Yongin (Korea, Republic of)
- 2. Department of Electronics and Computer Engineering, Hanyang University, Seoul (Korea, Republic of)
Description
We report the adsorption effect on the electrical transport of nanotube field effect transistors. The source-drain current is monitored separately for the nanotube channel and the metal-nanotube junction under different pressures of ambient air with a blocking passivation. The metal-nanotube junction shows a significant change from p-type to ambipolar upon vacuum pumping, while the nanotube channel changes modestly. The metal-nanotube junction is found to be far more sensitive to the environment than the nanotube channel. We suggest that the adsorption states underneath the blocking layer do not desorb, and thus the positive carriers would not be diluted upon the vacuum pumping. This result is interpreted as the formation of an i-p-i and p-i-p junction with charge transfer by oxygen molecules. (fast track communication)
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/41/10/102007Additional details
Identifiers
- DOI
- 10.1088/0022-3727/41/10/102007;
- PII
- S0022-3727(08)72637-8;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 41
- Journal Issue
- 10
- Journal Page Range
- [5 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40037145
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ADSORPTION; AIR; CARBON; CHARGE CARRIERS; CHARGED-PARTICLE TRANSPORT; DEPLETION LAYER; FIELD EFFECT TRANSISTORS; METALS; NANOTUBES; OXYGEN; PASSIVATION
- Descriptors DEC
- ELEMENTS; FLUIDS; GASES; LAYERS; NANOSTRUCTURES; NONMETALS; RADIATION TRANSPORT; SEMICONDUCTOR DEVICES; SORPTION; TRANSISTORS