Study of the exclusion of minority carriers in p-TYPE Cd /SUB x/ Hg /SUB 1-x/ Te

This paper presents the results of a study of the exclusion of minority nonequilibrium carriers in specimens of p-type Cd /SUB x/ Hg /SUB 1-x/ Te. To reduce the role of the injection of minority carriers from contacts the authors used the specimens illustrated in this work. The results of this study show that when the bias voltage increases over the range from 0.1 to 1.0 the photocurrent increases in proportion to bias voltage. The lifetime as a function of the temperature for two boundary conditions (weak and strong electric fields) are presented. On the basis of time-of-flight measurements the authors obtained the values of the ambipolar carrier mobility