Published December 1990
| Version v1
Journal article
Pulsed laser-induced SEU in integrated circuits
Creators
- 1. Martin Marietta Labs., Baltimore, MD (USA)
- 2. Naval Research Lab., Washington, DC (USA)
- 3. Harris Corp., Melbourne, FL (USA). Semiconductor Sector
Description
The authors have used a pulsed picosecond laser to measure the threshold for single event upset (SEU) and single event latchup (SEL) for two different kinds of integrated circuits. The relative thresholds show good agreement with published ion upset data. The consistency of the results together with the advantages of using a laser system suggest that the pulsed laser can be used for SEU/SEL hardness assurance of integrated circuits
Additional details
Additional titles
- Subtitle (English)
- A practical method for hardness assurance testing
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 37
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 1825-1831
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- 27. IEEE annual conference on nuclear and space radiation effects.
- Dates
- 16-20 Jul 1990.
- Place
- Reno, NV (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22056396
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- INTEGRATED CIRCUITS; LASERS; PHYSICAL RADIATION EFFECTS; PULSES; RADIATION HARDENING; THRESHOLD ENERGY
- Descriptors DEC
- AMPLIFIERS; ELECTRONIC CIRCUITS; ENERGY; EQUIPMENT; HARDENING; RADIATION EFFECTS
Optional Information
- Secondary number(s)
- CONF-900723--.