Published September 2011 | Version v1
Journal article Metadata-only

Influence of the superhigh-frequency electromagnetic irradiation on the intrinsic stress relaxation of Schottky barrier diode structures

Creators

  • 1. Kara-Kalpak State University, Nukus (Uzbekistan)

Description

The influence of the electromagnetic irradiation with frequency of 2.45 GHz and power 800 W on the intrinsic stress relaxation in Schottky barrier diode structures (Mo-n-n+-GaAs), as well as related effects of structural-defect ordering have been considered. The effects are accompanied by change in the barrier structure parameters: growth of the Schottky barrier height and decreasing the ideality factor. (authors)

Additional details

Additional titles

Original title (Russian)
Влияние сверхвысокочастотного излучения на процессы структурного упорядочения в диодах с барьером Шоттки

Publishing Information

Journal Title
Uzbekiston Fizika Zhurnali
Journal Volume
13
Journal Issue
5
Journal Page Range
p. 349-353
ISSN
1025-8817

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
44050731
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DEFECTS; DEFORMATION; DIFFUSION; GALLIUM ARSENIDES; GHZ RANGE; HEIGHT; INTERFACES; IRRADIATION; MICROWAVE RADIATION; PHASE TRANSFORMATIONS; SCHOTTKY BARRIER DIODES; STRESS RELAXATION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; DIMENSIONS; ELECTROMAGNETIC RADIATION; FREQUENCY RANGE; GALLIUM COMPOUNDS; PNICTIDES; RADIATIONS; RELAXATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information

Notes
11 refs., 1 figs., 1 tab.