Radiation-induced defects in silicon and germanium. Secondary emission investigation method

Radiation defects in germanium and silicon have been investigated by means of secondary emission method. Results of a series of experiments on the irradiation of a Ge monocrystal with 1-10 keV ions of Ne+, Ar+, Kr+, Xe+ inert gases are presented. Determined were a mean effective cross section of a disorded region (DR), degree of its disturbance, depth of a forming amorphous layer, amorphization dose and efficiency of introduction of stable defects. Dependences of the amorphization dose and a thickness of the amorphous layer on temperature have been investigated. Profiles of structure disturbance distributions in silicon irradiated with B+, N+, O+, P+ ions of 50-100 keV energies have been investigated as well