Optical properties of re-crystallized polycrystalline silicon thin films from a-Si films deposited by electron beam evaporation

This paper deals with the structural and optical properties of the polycrystalline silicon films initially deposited in amorphous state by electron beam evaporation technology on a Corning glass and consequently thermally re-crystallized from solid phase. The re-crystallization process was 'in situ' monitored by X-ray diffraction using an evacuated high temperature chamber at temperatures from 590 grad C to 650 grad C. Optical properties of the films carried out from the optical spectrophotometry recorded in a visible range of electromagnetic spectra were then confronted with the micro-structure parameters of the films. Relationships between the crystalline/amorphous composition, crystallite size, optical band-gaps and spectral extinction coefficients are clearly demonstrated. (authors)