Published January 1, 2007
| Version v1
Journal article
High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers
Description
Synchrotron x-ray topography with a high-resolution setup using 11-28 reflection was carried out on 4H-SiC epilayers. Four different shapes of threading-edge dislocation according to Burgers vector direction were observed. The four types of threading-edge dislocation images were calculated by computer simulation, and the experimental results correlated well with the simulation results. The detailed topographic features generated by plural screw dislocations and basal plane dislocations were also investigated
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Materials Research
- Journal Volume
- 22
- Journal Page Range
- p. 845-849
- ISSN
- 0884-2914
- CODEN
- JMREEE
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 40002569
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BURGERS VECTOR; COMPUTERIZED SIMULATION; DISLOCATIONS; IMAGES; REFLECTION; SCREW DISLOCATIONS; SIMULATION; SYNCHROTRONS; TOPOGRAPHY
- Descriptors DEC
- ACCELERATORS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CYCLIC ACCELERATORS; DISLOCATIONS; LINE DEFECTS; SIMULATION
Optional Information
- Contract/Grant/Project number
- AC02-98CH10886
- Notes
- doi 10.1557/jmr.2007.0132
- Funding organization
- DS (US)
- Secondary number(s)
- BNL--80675-2008-JA