Published August 2012 | Version v1
Journal article Metadata-only

Characteristics of a GaN-based Gunn diode for THz signal generation

Creators

  • 1. ITER, Siksha 'O' Anusandhan University, Bhubaneswar, Odisha, 751030 (India)
  • 2. Rengali College, Sambalpur, Odisha (India)
  • 3. Sambalpur University, Sambalpur, Odisha, 768019 (India)
  • 4. National Institute of Science and Technology, Berhampur, Odisha, 761008 (India)

Description

A generalized large-signal computer simulation program for a Gunn oscillator has been developed. The properties of a Gunn diode oscillator based on the widely explored GaN, are investigated using the developed program. The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and InP diodes. An output power of 1400 kW/cm2 is achieved from the GaN Gunn diode, as compared to 4.9 kW/cm2 from a GaAs diode. (semiconductor devices)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/33/8/084001

Additional details

Identifiers

DOI
10.1088/1674-4926/33/8/084001;

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
33
Journal Issue
8
Journal Page Range
[7 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44043271
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COMPUTERIZED SIMULATION; GALLIUM ARSENIDES; GALLIUM NITRIDES; INDIUM PHOSPHIDES; OSCILLATORS; SEMICONDUCTOR DIODES; SIGNALS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SIMULATION