Published November 2010 | Version v1
Journal article

Development of silicon purification by strong radiation catalysis method

  • 1. Southern University of Science and Technology, Shenzhen 518055 (China)
  • 2. Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  • 3. Yangzhou University, Yangzhou 225009 (China)

Description

Using a new type of solar furnace and a specially designed induction furnace, cost effective and highly efficient purification of metallurgical silicon into solar grade silicon can be achieved. It is realized by a new method for extracting boron from silicon with the aid of photo-chemical effect. In this article, we discussed the postulated principle of strong radiation catalysis and the recent development in practice. Starting from ordinary metallurgical silicon, we achieved a purification result of 0.12 ppmw to 0.3 ppmw of boron impurity in silicon by only single pass of a low cost and simple process, the major obstacle to make 'cheap' solar grade silicon feedstock in industry is thus removed. (rapid communication)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/19/11/118105

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
19
Journal Issue
11
Journal Page Range
[7 p.]
ISSN
1674-1056