Published June 1980
| Version v1
Journal article
Doping of semi-insulating and n-type GaAs by neutron transmutation
- 1. Siemens AG, Forschungslaboratorien, Muenchen, Germany
Description
By bombarding GaAs wafers with thermal neutrons it has been possible to introduce a specific constant donor concentration. The radiation damage caused by bombardment can be annealed at temperatures below 800 0C. A room temperature electron mobility of 3900 cm2/Vs has been achieved at an impurity concentration of 5 x 1017 cm-3. The doping of n--type layers shows, in addition to the expected doping effect, that the n--type layer is compensated near the semi-insulating substrate
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 51
- Journal Issue
- 6
- Series
- J. Appl. Phys.
- Journal Page Range
- 3178-3180
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11551052
- Subject category
- S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Descriptors DEI
- ANNEALING; DATA; DOPED MATERIALS; ELECTRON MOBILITY; GALLIUM ARSENIDES; HIGH TEMPERATURE; IMPURITIES; MEDIUM TEMPERATURE; N-TYPE CONDUCTORS; NEUTRONS; PHYSICAL RADIATION EFFECTS; QUANTITY RATIO; TRANSMUTATION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BARYONS; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; HADRONS; HEAT TREATMENTS; INFORMATION; MOBILITY; NUCLEONS; PARTICLE MOBILITY; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS