Published July 2015 | Version v1
Journal article

Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow

  • 1. Siberian Branch of the Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics (Russian Federation)

Description

This paper is devoted to the study of the nitridation of unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 × 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150°C) resulting in sapphire surface reconstruction with formation of the (√31 ×√31)R ± 9° surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
49
Journal Issue
7
Journal Page Range
p. 905-910
ISSN
1063-7826
CODEN
SMICES

Optional Information

Copyright
Copyright (c) 2015 Pleiades Publishing, Ltd.