Published May 21, 2012
| Version v1
Journal article
Optoelectronic properties of InAs/GaSb superlattices with asymmetric interfaces
Creators
- 1. Rzeszów University of Technology, Al. Powstańcow Warszawy 12, 35-959 Rzeszow (Poland)
- 2. University of Nottingham, The George Green Institute for Electromagnetics Reasarch, University Park, Nottingham NG7 2RD (United Kingdom)
- 3. Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa (Poland)
Description
In this work the optoelectronic properties of InAs/GaSb superlattices are investigated. The k∙p method and four-band Kane model were used to calculate the electronic states in the structure at 0K. Superlattices with different period thickness and two types of interfaces were considered. In the calculations strain and nonparabolicity effects were taken into account. Transition energies and the corresponding cut-off wavelengths were determined.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/367/1/012014Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 367
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 3. workshop on theory, modelling and computational methods for semiconductors
- Dates
- 18-20 Jan 2012
- Place
- Leeds (United Kingdom)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43104509
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ASYMMETRY; ELECTRONIC STRUCTURE; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; INTERFACES; STRAINS; SUPERLATTICES; TEMPERATURE ZERO K; THICKNESS; WAVELENGTHS
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DIMENSIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PNICTIDES