Published February 1983
| Version v1
Journal article
Amorphous-polycrystalline silicon isojunctions
Creators
- 1. Instituto de Desarrollo Tecnologico para la Insdustria Quimica, Santa Fe (Argentina)
Description
In this work, it is studied the formation and characteristics of the amorphous - polycristalline silicon isojunction barrier. (A.C.A.S.)
Abstract (Portuguese)
Neste trabalho, estudam-se a formacao e as caracteristicas da barreira de isojuncao de silicio amorfo policristalino. (A.C.A.S.)Additional details
Publishing Information
- Journal Title
- Revista Brasileira de Fisica
- Journal Volume
- 13
- Journal Issue
- special issue
- Series
- Rev. Bras. Fis.
- Journal Page Range
- 463-473
- ISSN
- 0374-4922
- CODEN
- RBFSA
Conference
- Title
- 1. Brazilian School on Semiconductor Physics.
- Dates
- 31 Jan - 11 Feb 1983.
- Place
- Campinas, SP (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 21088606
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; POLYCRYSTALS; SILICON
- Descriptors DEC
- CRYSTALS; ELEMENTS; SEMIMETALS