Published 1995
| Version v1
Report
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Ageing of metal / ultra thin oxides / semiconductor structures under current injection by Fowler-Nordheim effect and X rays irradiation
Creators
- 1. Laboratoire d'electronique appliquee L.E.A.A., (Morocco)
- 2. Centre National de la Recherche Scientifique (CNRS), 31 - Toulouse (France). Lab. d'Automatique et d'Analyse des Systemes
Description
In this paper, we are investigating the aging effect by injection of currents (by Fowler-Nordheim FN effect) and irradiation (by X-rays) on metal / ultra thin oxide / semiconductor structures with oxide layers of thickness lying between 40 and 120 angstrom. We are particularly presenting the influence of oxide layer thickness, the dose of irradiation on the degradation of both oxide and oxide-semiconductor interface. (author)
Availability note (English)
MF available from INIS under the Report Number.Files
28059818.pdf
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Additional details
Additional titles
- Original title (French)
- Vieillissement des structures metal / oxyde ultra-mince / semiconducteur sous injection de courants par effet fowler-nordheim et irradiation par rayons X
Publishing Information
- Imprint Pagination
- 6 p.
- Report number
- CNRS-LAAS--95417
Conference
- Title
- Mediterranean conference on electronic and automatic control (MCEA-95).
- Dates
- 13-15 Sep 1995.
- Place
- Grenoble (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 28059818
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AGING; FOWLER-NORDHEIM THEORY; INTERFACES; LAYERS; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SEMICONDUCTOR STORAGE DEVICES; SUBSTRATES; THIN FILMS; TRAPS; X RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; FILMS; IONIZING RADIATIONS; MEMORY DEVICES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- 15 refs.