Published January 2007
| Version v1
Journal article
Optical properties and thermal stability of GaAsN alloy films
- 1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083, Shanghai (China)
- 2. Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
- 3. Department of Physics, Fudan University, Shanghai, 200433 (China)
Description
The optical properties of GaAsN films have been studied by photoluminescence (PL) and photo-modulation reflection (PR). The effects of postgrowth anneal on the band structure and optical efficiency have been shown basing on these measurements. Both the samples with close N content grown at different temperatures exhibit high crystalline quality according to the X-ray diffraction. The alloy films show remarkable stability against rapid thermal annealing (RTA) process. The blueshift of the PL peak energy is found to be 3.8 meV when annealing up to 900 deg. C, meanwhile the PL intensity increases significantly until RTA at 850 deg. C
Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2006.01.082;
- PII
- S0022-2313(06)00085-8;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 122-123
- Journal Page Range
- p. 182-184
- ISSN
- 0022-2313
- CODEN
- JLUMA8
Conference
- Title
- 2005 international conference on luminescence and optical spectroscopy of condensed matter
- Acronym
- ICL'05
- Dates
- 25-29 Jul 2005
- Place
- Beijing (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38034814
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ARSENIC ALLOYS; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; NITROGEN ADDITIONS; OPTICAL PROPERTIES; PEAKS; PHOTOLUMINESCENCE; REFLECTION; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EMISSION; EPITAXY; FILMS; HEAT TREATMENTS; LUMINESCENCE; PHOTON EMISSION; PHYSICAL PROPERTIES; SCATTERING
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.