A survey on X-ray scattering techniques for structural characterization of advanced thin films
Creators
- 1. National Institute of Advanced Industrial Science and Technology, Research Institute for Material and Chemical Measurement, Tsukuba, Ibaraki (Japan)
Description
Metrology requirements are driven by advancement of industrial material and its processing technology. Research in the electronics industry has focused on reducing the thickness of thin films in the device components, integrating 3D structures with ever decreasing dimensions into the device architecture, and utilizing emerging materials for novel devices such as atomically thin materials. Such research relies on highly-reliable analytical techniques which can measure structures of objects with a desired length scale and dimension. One potential candidate is X-ray scattering, since this method is nondestructive and the obtained data are traceable to the standard unit of length. This report focuses on the following X-ray scattering techniques: X-ray reflectivity (XRR) for density and thickness of thin films, X-ray crystal truncation rod scattering (CTR) for atomic structure at interfacial region, and critical dimension X-ray small angle scattering (CD-SAXS) for 3D shape of nano-structure. The principles and characteristics are reviewed, and the problems and prospects for practical applications are discussed. (author)
Availability note (English)
Available from https://unit.aist.go.jp/nmij/public/report/bulletin/Vol10/1/V10N1P87.pdfAdditional details
Additional titles
- Original title (Japanese)
- X線散乱法による先端薄膜材料の構造評価に関する調査研究
Publishing Information
- Journal Title
- Sansoken Keiryo Hyojun Hokoku
- Journal Volume
- 10
- Journal Issue
- 1
- Series
- 雑誌名:産総研計量標準報告
- Journal Page Range
- p. 87-97
- ISSN
- 1347-1473
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 51044385
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRON DENSITY; FIELD EFFECT TRANSISTORS; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; NANOSTRUCTURES; PHYSICAL RADIATION EFFECTS; REFLECTIVITY; RUTHERFORD SCATTERING; SMALL ANGLE SCATTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; WAVELENGTHS; X-RAY EMISSION ANALYSIS
- Descriptors DEC
- CHEMICAL ANALYSIS; ELASTIC SCATTERING; ELECTRON MICROSCOPY; FILMS; MICROANALYSIS; MICROSCOPY; NONDESTRUCTIVE ANALYSIS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATION EFFECTS; SCATTERING; SEMICONDUCTOR DEVICES; SPECTROSCOPY; SURFACE PROPERTIES; TRANSISTORS
Optional Information
- Notes
- 61 refs., 9 figs., 2 tabs.