Published December 1987
| Version v1
Report
Open
Neutron transmutation doping of gallium arsenide
Description
Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm3 per cm2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated
Files
19066806.pdf
Files
(223.2 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:a5633726f0114dd981aeaa0a6f0dd1bd
|
223.2 kB | Preview Download |
Additional details
Publishing Information
- ISBN
- 0 642 59877 0
- Imprint Pagination
- 14 p.
- Report number
- ANSTO/E--670
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 19066806
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CADMIUM; CRYSTAL DOPING; GALLIUM ARSENIDES; NEUTRON FLUX; NEUTRONS; P-TYPE CONDUCTORS; TRANSMUTATION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BARYONS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; GALLIUM COMPOUNDS; HADRONS; HEAT TREATMENTS; MATERIALS; METALS; NUCLEONS; RADIATION FLUX; SEMICONDUCTOR MATERIALS