Published June 1, 2016
| Version v1
Journal article
Evaluation of light extraction efficiency for the light-emitting diodes based on the transfer matrix formalism and ray-tracing method
Creators
- 1. Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Description
The internal quantum efficiency (IQE) of the light-emitting diodes can be calculated by the ratio of the external quantum efficiency (EQE) and the light extraction efficiency (LEE). The EQE can be measured experimentally, but the LEE is difficult to calculate due to the complicated LED structures. In this work, a model was established to calculate the LEE by combining the transfer matrix formalism and an in-plane ray tracing method. With the calculated LEE, the IQE was determined and made a good agreement with that obtained by the ABC model and temperature-dependent photoluminescence method. The proposed method makes the determination of the IQE more practical and conventional. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/37/6/064015Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 37
- Journal Issue
- 6
- Journal Page Range
- [7 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49094764
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EVALUATION; EXTRACTION; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; TEMPERATURE DEPENDENCE; VISIBLE RADIATION
- Descriptors DEC
- EFFICIENCY; ELECTROMAGNETIC RADIATION; EMISSION; LUMINESCENCE; PHOTON EMISSION; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEPARATION PROCESSES