Published December 1, 2005 | Version v1
Journal article

Microstructure and giant magnetoresistance behavior of amorphous CoNbZr based pseudo spin-valves with symmetric layer structures

  • 1. School of Microelectronic and Solid-state Electronic, University of Electronic Science and Technology of China, Chengdu, 610054 (China)
  • 2. Department of Physics and Astronomy, University of Delaware, Newark, DE 19716 (United States)

Description

The effects of amorphous CoNbZr layer on the microstructures and giant magnetoresistance (GMR) behavior of pseudo spin-valve (PSV) have been investigated by comparing two types of sandwiches, CoNbZr/Cu/Co (CNZ-PSV) and Co/Cu/CoNbZr (Co-PSV). X-ray reflectivity experiment and high-resolution transmission electron microscopy show that CNZ-PSV has smooth interfaces, while the Co-PSV has rough interfaces and a Co-Cu mixed layer forms between Co and Cu layers. Those defects are believed to induce strong magnetostatic coupling and cripple the GMR effect. Further researches show that the Cu on Co layer has a loose structure, while the Cu on CoNbZr is flat, dense and pinholes-free. Upon proper thermal annealing, the CoNbZr (2.6 nm)/Cu (2.2 nm)/Co (3 nm) has a large GMR enhancement to 9% and a superior thermal stability up to 350 deg. C. These results indicate that the amorphous CoNbZr soft layer can also act as a buffer layer and promotes excellent microstructure quality of the sandwich stack

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.06.094;
PII
S0040-6090(05)00717-0;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
492
Journal Issue
1-2
Journal Page Range
p. 259-263
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.