Feasibility of cyclotron resonance studies in semiconductors with a high carrier concentration

In semiconductors with a high carrier concentration, conventional microwave cyclotron resonance measurements are not possible because of the ''magnetoplasma shift''. The paper discusses several techniques for circumventing this problem. It is shown that despite high carrier concentration, experiments involving electric dipole interaction can be sensitive to band parameters of minority carriers and carriers with anisotropic effective mass. Furthermore, magnetic dipole interaction shows promise for circumventing plasma effects. The onset of helicon propagation in the Faraday geometry can also be exploited for determining the cyclotron frequency. Finally, non-local effects in wave propagation in the Voigt geometry lead to resonances in the microwave cyclotron resonance region when the carrier concentration is high. (author)