Dosimetric characterization and computational modeling of metal-oxide-semiconductor field effect transistor type detector
Description
In vivo dosimetry is an essential tool for quality assurance programs in the field of radiotherapy, being a commonly performed procedure with TLDs or diodes. However, a dosimeter coming in popularity growing in recent years is the metal-oxide-semiconductor field-effect transistor (MOSFET) type detector. MOSFET dosimeters fulfill all necessary characteristics to perform the dosimetry in vivo, since they have small size, good precision and viability of measurement, besides its easy handling. Nevertheless, its true differential is to provide dose reading in real time, allowing immediate intervention in the deviations correction of physical parameters and the anticipation of small anatomical changes in the patient during a treatment. Thus, it was proposed the dosimetric characterization of the TN-502RDM-H microMOSFET detector and the construction of its respective computational model in MCNP6. Results showed that MOSFET dosimeter has good reproducibility, good linearity and energy independence for high energy beams of photons and electrons. Regarding linearity, the excellent performance of the MOSFET detector for dose values above 50 cGy stands out, since the dosimeter presented an accuracy of up to 0.3%. In addition, a single calibration factor was obtained with a reproducibility of 2.9% considering photons and high energy electrons. Angular dependencies of 4% and 13% were also observed for irradiations with and without the charged-particle equilibrium (CPE), respectively. It was found a difference of 8% in the response between low energy photon in RQR 3 and RQR 10 qualities. Concerning the computational model, use of the structural characterization techniques of SEM and EDS allowed to estimate geometry and composition of the MOSFET device. Excellent agreement of simulated energy dependence in MCNP6 with that calculated analytically and with literature is highlighted. Finally, MOSFET dosimeter showed good dosimetric performance, confirming its clinical potential. This certainly contributes to their greater acceptance in radiotherapy. Further, obtaining a suitable computational model provides a range of opportunities for future work, making it possible to improve the instrument in a variety of cancer treatment procedures. (author)
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Additional details
Additional titles
- Original title (Portuguese)
- Caracterização dosimétrica e modelagem computacional de um detector do tipo transistor de efeito de campo metal-óxido-semicondutor
Publishing Information
- Imprint Pagination
- 211 p.
- Report number
- INIS-BR--22815
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 50071399
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S61: RADIATION PROTECTION AND DOSIMETRY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- ABSORBED RADIATION DOSES; COMPUTERIZED SIMULATION; DOSEMETERS; DOSIMETRY; IN VIVO; KERMA; MONTE CARLO METHOD; MOSFET; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DETECTORS
- Descriptors DEC
- CALCULATION METHODS; DOSES; ELECTRON MICROSCOPY; FIELD EFFECT TRANSISTORS; MEASURING INSTRUMENTS; MICROSCOPY; MOS TRANSISTORS; RADIATION DETECTORS; RADIATION DOSES; SEMICONDUCTOR DEVICES; SIMULATION; TRANSISTORS