Published 2005 | Version v1
Miscellaneous Metadata-only

Structural characterization of GaN structures grown in three dimensions by MOCVD using X-ray diffraction techniques

Creators

  • 1. Universidade Estadual de Campinas, SP (Brazil)
  • 2. Universite de Bourgogne, Dijon cedex (France)

Description

no abstract available

Part of:
15. Annual meeting of the LNLS users - Abstracts

Additional details

Additional titles

Original title (English)
15. Reuniao anual de usuarios do LNLS - Resumos

Publishing Information

Imprint Title
15. Annual meeting of the LNLS users - Abstracts
Imprint Pagination
[340 p.]
Journal Page Range
[1 p.]

Conference

Title
15. Annual meeting of the LNLS users
Original Conference Title
15. Reuniao anual de usuarios do LNLS
Dates
21-22 Feb 2005
Place
Campinas, SP (Brazil)

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
37105259
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
BRAZILIAN LNLS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GALLIUM ARSENIDES; GALLIUM NITRIDES; LNLS STORAGE RING; SILICON; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BRAZILIAN ORGANIZATIONS; CHEMICAL COATING; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELEMENTS; GALLIUM COMPOUNDS; NATIONAL ORGANIZATIONS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATION SOURCES; SCATTERING; SEMIMETALS; STORAGE RINGS; SURFACE COATING; SYNCHROTRON RADIATION SOURCES

Optional Information

Notes
3 refs.; Part III-40 Imprint:15. Reuniao anual de usuarios do LNLS - Resumos