The study of the transformation mechanism of Cr to Cr-nitride by N+ implantation
Creators
- 1. Northeast Univ. of Technology, Shenyang (China). Physics Dept.
- 2. Academia Sinica, Shenyang (China). Lab. of Atomic Imaging of Solids
- 3. Academia Sinica, Beijing, (China). Beijing Lab. of Vacuum Physics
Description
On the basis of the preceding papers about Cr-nitride formation with N+ implantation, our work is focused on some special details about the mechanism of the phase transformation during N+ implantation. Through analyzing the lattice transformation matrix and considering the diffusion effect within the implanted layer, three models of phase-transformation have been proposed. Cr-nitride is formed in the implanted layer, and the layer-state phase of Cr-nitride is due to the selective growth of the new phase related to the lattice expanding and diffusion effect. It is supported by the analysis by transmission electron microscopy (TEM). By means of high-resolution TEM (HRTEM), the layer-state phase of Cr-nitride formed by N+ implantation was observed directly. (Author)
Additional details
Publishing Information
- Journal Title
- Vacuum
- Journal Volume
- 43
- Journal Issue
- 11
- Journal Page Range
- p. 1065-1067.
- ISSN
- 0042-207X
- CODEN
- VACUAV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 24009590
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHROMIUM; CHROMIUM NITRIDES; DIFFUSION; ION IMPLANTATION; LATTICE PARAMETERS; NITRIDATION; NITROGEN IONS; PHASE TRANSFORMATIONS; REACTION KINETICS
- Descriptors DEC
- CHARGED PARTICLES; CHEMICAL REACTIONS; CHROMIUM COMPOUNDS; ELEMENTS; IONS; KINETICS; METALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS