Published September 2010 | Version v1
Journal article Metadata-only

Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

Creators

  • 1. J B College, Jorhat, Assam (India). Dept. of Physics. Thin Film Lab.
  • 2. Dibrugarh University, Dibrugarh, Assam (India)

Description

We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 104 and mobility is 0.13cm2/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

Availability note (English)

Also available from http://www.scielo.br/pdf/bjp/v40n3/a19v40n3.pdf

Additional details

Identifiers

URL
http://www.scielo.br/pdf/bjp/v40n3/a19v40n3.pdf;

Publishing Information

Journal Title
Brazilian Journal of Physics
Journal Volume
40
Journal Issue
3
Journal Page Range
p. 357-360
ISSN
0103-9733
CODEN
BJPHE6

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
41125149
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MOBILITY; NEODYMIUM OXIDES; PENTACENE; PERMITTIVITY; THIN FILMS; TRANSISTORS
Descriptors DEC
AROMATICS; CHALCOGENIDES; CONDENSED AROMATICS; CURRENTS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; FILMS; HYDROCARBONS; MATERIALS; NEODYMIUM COMPOUNDS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SEMICONDUCTOR DEVICES