Published 1990
| Version v1
Book
Importance of filament reactivity for CVD diamond growth
Description
The behavior of tungsten filaments heated up to 2500 degrees C in mixtures of CH4 or C2H2 and H2 at P = 9 and 25 Torr is analyzed. It has been found that the filament resistance R, spectral emissivity ε, power consumption, and CH4 and C2H2 partial pressures depend critically on the filament temperature as well as the reactant CH4/H2 or C2H2/H2 traction. The authors interpret these results on the basis of a thermodynamic model which predicts that transitions between deposition and etching of solid carbon occur on the filament surface at high temperatures. The implications of these results for diamond CVD are discussed. Evidence for gas phase reactions is also presented
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 1-55899-050-X
- Imprint Title
- Diamond, silicon carbide and related wide bandgap semiconductors
- Imprint Pagination
- 627 p.
- Journal Page Range
- p. 139-144.
Conference
- Title
- Materials Research Society meeting on diamond, silicon carbide and related wide bandgap semiconductors.
- Dates
- 27 Nov - 2 Dec 1989.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22054816
- Subject category
- S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL REACTION KINETICS; CHEMICAL VAPOR DEPOSITION; DIAMONDS; ETCHING; FILAMENTS; MATHEMATICAL MODELS; THERMODYNAMICS; TUNGSTEN
- Descriptors DEC
- CARBON; CHEMICAL COATING; DEPOSITION; ELEMENTS; KINETICS; METALS; MINERALS; NONMETALS; REACTION KINETICS; SURFACE COATING; TRANSITION ELEMENTS
Optional Information
- Secondary number(s)
- CONF-8911168--.