Published 1990 | Version v1
Book

Importance of filament reactivity for CVD diamond growth

  • 1. City Coll., New York, NY (USA). Dept. of Physics

Description

The behavior of tungsten filaments heated up to 2500 degrees C in mixtures of CH4 or C2H2 and H2 at P = 9 and 25 Torr is analyzed. It has been found that the filament resistance R, spectral emissivity ε, power consumption, and CH4 and C2H2 partial pressures depend critically on the filament temperature as well as the reactant CH4/H2 or C2H2/H2 traction. The authors interpret these results on the basis of a thermodynamic model which predicts that transitions between deposition and etching of solid carbon occur on the filament surface at high temperatures. The implications of these results for diamond CVD are discussed. Evidence for gas phase reactions is also presented

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-050-X
Imprint Title
Diamond, silicon carbide and related wide bandgap semiconductors
Imprint Pagination
627 p.
Journal Page Range
p. 139-144.

Conference

Title
Materials Research Society meeting on diamond, silicon carbide and related wide bandgap semiconductors.
Dates
27 Nov - 2 Dec 1989.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22054816
Subject category
S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHEMICAL REACTION KINETICS; CHEMICAL VAPOR DEPOSITION; DIAMONDS; ETCHING; FILAMENTS; MATHEMATICAL MODELS; THERMODYNAMICS; TUNGSTEN
Descriptors DEC
CARBON; CHEMICAL COATING; DEPOSITION; ELEMENTS; KINETICS; METALS; MINERALS; NONMETALS; REACTION KINETICS; SURFACE COATING; TRANSITION ELEMENTS

Optional Information

Secondary number(s)
CONF-8911168--.