Published 1998
| Version v1
Miscellaneous
Gettering of Cu atoms in silicon induced by Ne implantation
Creators
- 1. Institute of Physics, Maria Curie-Sklodowska University, Lublin (Poland)
- 2. Joint Institute for Nuclear Research, Dubna (Joint Institute for Nuclear Research (JINR))
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION'98
- Imprint Pagination
- 171 p.
- Journal Page Range
- p. 49-50
Conference
- Title
- International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION'98
- Dates
- 16-19 Jun 1998
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31020267
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ANNEALING; BORON ADDITIONS; COPPER IONS; CRYSTAL DEFECTS; DOPED MATERIALS; GETTERING; IMPURITIES; ION IMPLANTATION; MEETINGS; NEON IONS; RUTHERFORD SCATTERING; SILICON
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; ELASTIC SCATTERING; ELEMENTS; HEAT TREATMENTS; IONS; MATERIALS; SCATTERING; SEMIMETALS