Published February 1989
| Version v1
Journal article
Positron annihilation in disordered regions in neutron-irradiated Ge and Si
- 1. B. P. Konstantinov Leningrad Institute of Nuclear Physics, Gatchina (USSR)
Description
The method of angular distribution of annihilation photons was used to investigate the formation and annealing of radiation defects in Ge and Si irradiated with reactor neutrons. These effects were studied as a function of the type of conduction of the dopant concentration. The nature of annealing demonstrated positron annihilation at multivacancy complexes located within disordered regions
Additional details
Publishing Information
- Journal Title
- Soviet Physics - Semiconductors (English Translation)
- Journal Volume
- 23
- Journal Issue
- 2
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 160-164
- ISSN
- 0038-5700
- CODEN
- SPSEA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21089688
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- ANNEALING; DATA PROCESSING; DEFECTS; DOPED MATERIALS; EXPERIMENTAL DATA; GERMANIUM; MEASURING INSTRUMENTS; MEASURING METHODS; NEUTRONS; PHYSICAL RADIATION EFFECTS; POSITRONS; SEMICONDUCTOR MATERIALS; SILICON; USSR
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; BARYONS; DATA; DEVELOPED COUNTRIES; ELEMENTARY PARTICLES; ELEMENTS; EUROPE; FERMIONS; HADRONS; HEAT TREATMENTS; INFORMATION; LEPTONS; MATERIALS; MATTER; METALS; NUCLEONS; NUMERICAL DATA; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).