Published 1985 | Version v1
Journal article

Ion beam gettering in A/sup III/B/sup V/ compounds

  • 1. Humboldt-Universitaet, Berlin (German Democratic Republic). Sektion Physik

Description

The changes in distribution of copper and nickel implantation profiles in GaAs and GaP after furnace and electron beam annealing have been investigated by means of secondary ion mass spectrometry (SIMS) and Rutherford backscattering technique (RBS). Characteristic parameters of gettering can be determined from gettering of copper at amorphous layers (produced by beams of Ar+, Kr+, As+, Ga+, P+ ions) as a function of annealing conditions

Additional details

Additional titles

Original title (German)
Ionenstrahlgetterung in A

Publishing Information

Journal Title
Wiss. Z. Humboldt-Univ. Berl., Math.-Naturwiss. Reihe
Journal Volume
34
Journal Issue
9
Series
Wiss. Z. Humboldt-Univ. Berl., Math.-Naturwiss. Reihe.
Journal Page Range
887-896
ISSN
0522-9863
CODEN
WZHMA