Published May 1, 1985
| Version v1
Journal article
Electron-hole plasma in direct-gap semiconductors
- 1. Rome Univ. (Italy). Ist. di Fisica
- 2. Ecole Polytechnique Federale, Lausanne (Switzerland). Inst. de Physique Appliquee
- 3. Milan Univ. (Italy). Ist. di Fisica
Description
Electron-hole plasma luminescence in direct gap Gasub(1-x)Alsub(x)As has been studied in 2- and 3-dimensionally confined samples. An upper limit of approx. 25 μm to the plasma diffusion length has been determined. Luminescence spectra of uniform, non expanding plasmas have been successfully analyzed in terms of a k-conserving many-body model, in which single-particle energy renormalization and lifetime broadening are included. The values of the gap renormalization are in very good agreement with current theoretical estimates. (Auth.)
Additional details
Publishing Information
- Journal Title
- Helv. Phys. Acta
- Journal Volume
- 58
- Journal Issue
- 2-3
- Series
- Helv. Phys. Acta.
- Journal Page Range
- 272-280
- ISSN
- 0018-0238
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 16062307
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; DIFFUSION LENGTH; GALLIUM ARSENIDES; LASER RADIATION; LUMINESCENCE; SOLID-STATE PLASMA; VISIBLE SPECTRA
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; EMISSION; GALLIUM COMPOUNDS; PHOTON EMISSION; PLASMA; RADIATIONS; SPECTRA