Electrical transport properties of sputtered Nd2−xCexCuO4±δ thin films

Thin films of the electron-doped high-temperature superconductor Nd_2−xCe_xCuO_4±δ have been deposited by dc sputtering technique on (100) SrTiO₃ substrates. A tuning of the oxygen content in the as-grown non-superconducting samples has been achieved by changing the oxygen partial pressure during the growth in the Argon sputtering atmosphere. All samples show the superconducting transition after a suitable two-step thermal treatment in an oxygen-reducing environment. Structural and electrical transport properties on the as-grown as well as on the superconducting samples have been investigated. We find that the structural properties are consistent with a deficiency of the oxygen content with respect to optimally annealed samples, and that the transition to the superconducting phase is always accompanied by an increase of the c-axis lattice parameter. Measurements of the Hall coefficient $R_H$ as a function of temperature and in the normal state of our epitaxial films are presented and discussed. $R_H$ results negative for all the films regardless of the oxygen content and it decreases with the temperature. In particular, the Hall coefficient is only about 10% lower than the value measured in the as-grown oxygen-deficient phase, in contrast to the results reported in literature. The removal of the excess oxygen in as-grown samples seems not to be the only requirement for triggering the superconducting transition in electron-doped compounds. The microstructural change associated with the increase of the c-axis parameter in our deoxygenated samples could help in understanding the microscopic mechanism underlying the reduction process of n-type superconductors, which is still under debate.