Published February 1983
| Version v1
Journal article
Angle resolved photoemission in semiconductors
Creators
- 1. Laboratoire pour l'Utilisation du Rayonnement Electromagnetique (LURE), Paris-11 Univ., 91 - Orsay (France)
Description
Bases of angular resolved photoemission: determination of the electronic band structure of solids (bulk), measurements of life-time and mean free path, determination of surfaces states (valence and core) and their relationship with surface reconstruction are described. (Author)
Abstract (Portuguese)
Descrevem-se as bases da fotoemissao com angulo resolvido: determinacao da estrutura de banda eletronica de solidos (corpo), medidas do tempo de vida e do livre caminho medio, determinacao dos estados de superficies (valencia e caroco) e seu relacionamento com reconstrucao de superficies. (L.C.)Additional details
Publishing Information
- Journal Title
- Rev. Bras. Fis.
- Journal Volume
- especial)
- Series
- Rev. Bras. Fis.
- Journal Page Range
- 78-103
- ISSN
- 0374-4922
Conference
- Title
- 1. Brazilian School on Semiconductor Physics.
- Dates
- 31 Jan - 11 Feb 1983.
- Place
- Campinas, SP (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 16079012
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- COMPILED DATA; ELECTRONIC STRUCTURE; EMISSION SPECTRA; EXPERIMENTAL DATA; LIFETIME; LINEAR MOMENTUM; MEAN FREE PATH; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SURFACES
- Descriptors DEC
- DATA; EMISSION; INFORMATION; MATERIALS; NUMERICAL DATA; SECONDARY EMISSION; SPECTRA