Published October 15, 2007
| Version v1
Journal article
Room temperature ferromagnetic (Zn,Co)O epitaxial films obtained by low-temperature MOCVD process
Creators
- 1. R. 551, Coordination Chemistry Laboratory, Inorganic Chemistry Division, Department of Chemistry, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation)
- 2. Department of Physics, University of Konstanz, 78457 Konstanz (Germany)
- 3. Institut fuer Festkoerperphysik, Technische Universitaet Dresden, 01062 Dresden (Germany)
- 4. Department of Physics, Moscow State University, Moscow 119992 (Russian Federation)
Description
High quality epitaxial films of Zn1-xCoxO solid solutions were obtained by low-temperature MOCVD process using water vapor up to x = 0.33. Depositions were carried out at 300 deg. C on r-sapphire substrates. Films structure and composition were investigated by XRD, XPS and EDX measurements. Magnetic properties were examined using SQUID and Kerr effect measurements. All samples showed ferromagnetic behavior at room temperature. NEXAFS and PES were employed to investigate electronic structure of the films
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2007.03.099Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2007.03.099;
- PII
- S0040-6090(07)00428-2;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 515
- Journal Issue
- 24
- Journal Page Range
- p. 8490-8494
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 1. international symposium on transparent conducting oxides
- Dates
- 23-26 Oct 2006
- Place
- Crete (Greece)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39071017
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; COBALT COMPOUNDS; DOPED MATERIALS; ELECTRONIC STRUCTURE; EPITAXY; FINE STRUCTURE; KERR EFFECT; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; SAPPHIRE; SOLID SOLUTIONS; SQUID DEVICES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; WATER VAPOR; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; COHERENT SCATTERING; CORUNDUM; CRYSTAL GROWTH METHODS; DEPOSITION; DIELECTRIC PROPERTIES; DIFFRACTION; DISPERSIONS; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; FLUIDS; FLUXMETERS; GASES; HOMOGENEOUS MIXTURES; MATERIALS; MEASURING INSTRUMENTS; MICROWAVE EQUIPMENT; MINERALS; MIXTURES; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; SCATTERING; SEMICONDUCTOR MATERIALS; SOLUTIONS; SPECTROSCOPY; SUPERCONDUCTING DEVICES; SURFACE COATING; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; VAPORS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.