Triggered polarization-entangled photon pairs from a single quantum dot up to 30 K
- 1. Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, Universitaet Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)
- 2. Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart (Germany)
- 3. Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden (Germany)
Description
The radiative biexciton-exciton decay in a semiconductor quantum dot (QD) has the potential of being a source of triggered polarization-entangled photon pairs. However, in most cases the anisotropy-induced exciton fine structure splitting destroys this entanglement. Here, we present measurements on improved QD structures, providing both significantly reduced inhomogeneous emission linewidths and near-zero fine structure splittings. A high-resolution detection technique is introduced which allows us to accurately determine the fine structure in the photoluminescence emission and therefore select appropriate QDs for quantum state tomography. We were able to verify the conditions of entangled or classically correlated photon pairs in full consistence with observed fine structure properties. Furthermore, we demonstrate reliable polarization-entanglement for elevated temperatures up to 30 K. The fidelity of the maximally entangled state decreases only a little from 72% at 4 K to 68% at 30 K. This is especially encouraging for future implementations in practical devices
Additional details
Identifiers
- DOI
- 10.1088/1367-2630/9/9/315;
- PII
- S1367-2630(07)53775-4;
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 9
- Journal Issue
- 9
- Journal Page Range
- p. 315
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39032115
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; EXCITONS; FINE STRUCTURE; LINE WIDTHS; PHOTOLUMINESCENCE; PHOTONS; POLARIZATION; QUANTUM DOTS; QUANTUM ENTANGLEMENT; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TOMOGRAPHY
- Descriptors DEC
- BOSONS; DIAGNOSTIC TECHNIQUES; ELEMENTARY PARTICLES; EMISSION; LUMINESCENCE; MASSLESS PARTICLES; MATERIALS; NANOSTRUCTURES; PHOTON EMISSION; QUASI PARTICLES; TEMPERATURE RANGE