Published November 2007 | Version v1
Journal article Metadata-only

Effect of switching dose rate on bipolar junction transistors at high temperature

Creators

  • 1. School of Maths-physics and Information Sciences, Xinjiang Normal Univ., Urumqi (China)

Description

Switching dose-rate irradiation of the Bipolar Junction Transistors at high temperature are investigated. The result shows that the switching dose-rate from high to low irradiation is benefit to evaluation of the Enhanced Low Dose Rate Sensitivity. Possible mechanism for this effect is discussed. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Electronics and Detection Technology
Journal Volume
27
Journal Issue
6
Journal Page Range
p. 1139-1141, 1145
ISSN
0258-0934

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
41053497
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
DOSE RATES; EVALUATION; JUNCTION TRANSISTORS; LOW DOSE IRRADIATION; PHYSICAL RADIATION EFFECTS; RADIOSENSITIVITY EFFECTS; TEMPERATURE RANGE 0273-0400 K; VARIATIONS
Descriptors DEC
IRRADIATION; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TRANSISTORS

Optional Information

Notes
2 figs., 9 refs.