Effect of the addition of a third element in a high silicon-iron alloy

Concerning the decrease of the wall motion resistive magnetic properties such as magnetocrystalline anisotropy of an electric sheet, we reported that quick quenching from 1100 0C suppressed the formation of a B2 superlattice which is roughly proportional to the anisotropy. Using iron single crystals containing 5.5 wt. % silicon with the addition of a small amount of a third element such as Mo to suppress the formation of the superlattice, we describe the quenching temperature dependence of the anisotropy and saturation magnetization. A remarkable decrease of room-temperature anisotropy was found in crystals with the additional element compared to those without the element