Use of alpha-particle excited x-rays to measure the thickness of thin films containing low-Z elements

The thickness of thin surface films containing low Z elements can be determined by measuring the K X-ray yields from alpha particle excitation. The samples are irradiated in a helium atmosphere by a 5 mCi polonium-210 source, and the low energy X-rays detected by a flow counter with a thin-stretched polypropylene window. The flow counter output is pulse height sorted by a single channel analyzer (SCA) and counted to give the X-ray yield. Best results have been obtained with Z = 6 to 9 (C, N, O, and F), but usable yields are obtained even for Z = 13 or 14 (Al and Si). The low energy of the X-rays (0.28 to 1.74 keV) limits the method to films of several hundred nm thickness or less and to situations where the substrate does not produce interfering X-rays. It is possible to determine the film thickness with 50 percent accuracy by direct calculation using the measured alpha-particle spectrum and known or calculated K X-ray excitation cross sections. By calibration with known standards the accuracy can be increased substantially. The system has thus far been applied to SiO2 on Si, Al2O3 on Al, and CH2 on Al