Topologies of Ge double-beta decay events and calibration procedure biases
- 1. Physik Department E15, Technische Universität München, James-Franck-Straße 1, 85748, Garching (Germany)
- 2. Department of Physics and Astronomy, University College London, Gower Street, WC1E 6BT, London (United Kingdom)
Description
The analysis of the time profile of electrical signals produced by energy depositions in germanium detectors allows discrimination of events with different topologies. This is especially relevant for experiments searching for the neutrinoless double beta decay of Ge to distinguish the sought-after signal from other background sources. The standard calibration procedures used to tune the selection criteria for double-beta decay events use a Th source, because it provides samples of signal-like events. These samples exhibit energy spatial distributions with subtle different topologies compared to neutrinoless double-beta decay events. In this work, we will characterize these topological differences and, with the support of a Co source, evaluate biases and precision of calibration techniques which use such event samples. Our results will be particularly relevant for future experiments in which a solid estimation of the efficiency is required.
Availability note (English)
Available from: http://dx.doi.org/10.1140/epjc/s10052-023-11396-zAdditional details
Identifiers
Publishing Information
- Journal Title
- European Physical Journal. C, Particles and Fields (Online)
- Journal Volume
- 83
- Journal Issue
- 3
- Journal Page Range
- vp.
- ISSN
- 1434-6052
- CODEN
- EPCFFB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 54055021
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CALIBRATION; ENERGY ABSORPTION; GE SEMICONDUCTOR DETECTORS; NEUTRINOLESS DOUBLE BETA DECAY; TOPOLOGY
- Descriptors DEC
- ABSORPTION; BETA DECAY; BETA-MINUS DECAY; DECAY; DOUBLE BETA DECAY; MATHEMATICS; MEASURING INSTRUMENTS; NUCLEAR DECAY; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SORPTION
Optional Information
- Notes
- AID: 236