Published November 1973
| Version v1
Journal article
On the effects under high doses of ions implanted into a semiconductor
- 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Об эффектах при больших дозах внедренных в полупроводник ионов
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 7
- Journal Issue
- 11
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 2195-2199
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 5120854
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; ION IMPLANTATION; IRRADIATION; MONOCRYSTALS; P-TYPE CONDUCTORS; PHOSPHORUS IONS; RADIATION DOSES; RECRYSTALLIZATION; SILICON; TWINNING
- Descriptors DEC
- CHARGED PARTICLES; CRYSTALS; ELEMENTS; IONS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- For English translation see the journal Sov. Phys.-Semicond.