Surface planarization effect of siloxane derivatives in organic semiconductor layers
- 1. Center for Organic Photonics and Electronics Research, Kyushu University, Nishi-ku, Fukuoka 819-0395 (Japan)
- 2. Department of Chemical Engineering, Graduate School of Engineering, Kyushu University, Nishi-ku, Fukuoka 819-0395 (Japan)
- 3. Institute of Systems, Information Technologies and Nanotechnologies, 2-1-22, Sawara-ku, Fukuoka 814-0001 (Japan)
Description
The ability of siloxane surface control additives (SCAs) to planarize organic semiconductor films with a thickness of tens of nanometers printed on indium tin oxide (ITO) surfaces with stripe-patterned bank structures using a liquid-phase method is demonstrated. Three types of SCAs with different molecular structures are examined in organic solutions of toluene, anisole and tetralin containing N,N′-bis(3-methylphenyl)-N,N′-bis(phenyl)-benzidine as a solute and typical organic semiconductor. While there is an optimum SCA and concentration for each solution, one type of SCA is comprehensively effective for all solutions. This SCA increased contact angle, which is contrary to the typical behavior of SCAs. Scanning electron microscope images of the thin films near the banks reveal that this SCA did not change the contact area between the film and substrate surface, which is related to the effectiveness of the SCA. SCAs did not affect the current–voltage characteristics of green organic light-emitting diodes, but did increase external quantum efficiencies, suggesting that SCAs can be used to improve the quality of solution-deposited films for use in optical devices. - Highlights: • Surface control additives planarize organic semiconductor films coated on surfaces. • The most effective additive increases the contact angle of solutions during drying. • The effect of additives is deduced from solutal Marangoni forces. • Additives have little effect on organic light-emitting diode performance.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2015.11.056Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2015.11.056;
- PII
- S0040-6090(15)01176-1;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 597
- Journal Page Range
- p. 212-219
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48020731
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOLE; BENZIDINE; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; INDIUM COMPOUNDS; LAYERS; LIGHT EMITTING DIODES; MOLECULAR STRUCTURE; ORGANIC SEMICONDUCTORS; QUANTUM EFFICIENCY; SCANNING ELECTRON MICROSCOPY; SILOXANES; SOLUTES; SUBSTRATES; SURFACES; TETRALIN; THIN FILMS; TIN OXIDES; TOLUENE; VISIBLE RADIATION
- Descriptors DEC
- ALKYLATED AROMATICS; AMINES; AROMATICS; CHALCOGENIDES; DIMENSIONLESS NUMBERS; EFFICIENCY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ETHERS; FILMS; HYDROAROMATICS; HYDROCARBONS; MATERIALS; MICROSCOPY; ORGANIC COMPOUNDS; ORGANIC OXYGEN COMPOUNDS; ORGANIC SILICON COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.