Published November 2012 | Version v1
Journal article

Effect of SrTiO3 thickness on the capacitance-voltage characteristics of (La,Sr)CoO3/(Pb,La)(Zr,Ti)O3/SrTiO3/LaVO3 epitaxial heterostructures

  • 1. Kookmin University, School of Advanced Materials Engineering, Seoul (Korea, Republic of)
  • 2. University of California, Department of Materials Science and Engineering, Berkeley, CA (United States)
  • 3. Purdue University, School of Materials Engineering, School of Electrical and Computer Engineering, West Lafayette, IN (United States)

Description

We report the effect of SrTiO3 thickness on the capacitance-voltage (C-V) characteristics of (La,Sr)CoO3/(Pb,La)(Zr,Ti)O3/SrTiO3/LaVO3 metal-ferroelectric-insulator-semiconductor (MFIS) epitaxial heterostructures. The C-V measurement of the heterostructure exhibited the asymmetry of capacitance with respect to gate bias. Within the given thickness range (5-30 nm), the amount of capacitance reduction at positive gate bias and the rapidness of capacitance reduction decreased with increasing SrTiO3 thickness, which is consistent with the C-V characteristics of conventional silicon-based MFIS capacitors. These results suggest that quantitative understanding on the electrical behavior of oxide heterostructures is possible with C-V analysis, with potentially important implications on their device applications. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-012-7245-3

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
109
Journal Issue
2
Journal Page Range
p. 285-289
ISSN
0947-8396
CODEN
APAMFC