Design and development of a PMOSFET gamma ray dosimeter

A P-channel MOSFET chip has been designed for detection of gamma radiations. The chip consists of three MOSFETs of different geometrical parameters for achieving sensitivity to low and high dose ranges. One of the MOSFET structures has a closed geometry to reduce the leakage current. The developed dosimeter being a MOSFET, its IC (Integrated Circuit)-compatibility helps in easy interfacing with readout circuitry. The dosimeter fabrication process is based on metal-gate MOSFET technology with thick gate oxide to increase the effective number of electron-hole pairs generated by the gamma rays impinging on the device. The process for the chip realization has been designed and simulated to achieve the required impurity diffusion profile. The chip has been fabricated using the above process and electrically characterized. The device has been exposed to gamma ray source and its characteristics measured. The change in threshold voltage of the MOSFET after exposure has been used to calculate the sensitivity of the device. The developed dosimeter has potential applications in personnel dosimetry and cancer treatment. This paper describes the basic detection mechanism of the MOSFET, the design approach, and fabrication process of the MOSFET dosimeter. (author)