Theoretical examination of barium ions effect on the valent electron spectrum of silicon

Theoretical examinations have shown that the generation of siliceous phases under the implantation of Ba into Si leads to the displacement of valent electrons spectrum by 0,7-0,8 eV, and the disorder of crystal structure of the surface shifts the spectrum by 0,3-0,4 eV. The calculated values of a shift of observed peaks satisfactory coincide with the experimental data. (author). 7 refs.; 1 fig