Published September 2008
| Version v1
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Comparative characteristics of photoelectrical properties in n-Si/fullerene C60 and n-Si/nanocomposite C60:Te heterostructures
Description
no abstract available
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Additional details
Publishing Information
- Imprint Place
- Chisinau (Moldova, Republic of)
- Imprint Title
- 4. International conference on materials science and condensed matter physics. Abstracts
- Imprint Pagination
- 259 p.
- Journal Page Range
- p. 184
- Report number
- INIS-MD--004
Conference
- Title
- 4. International conference on materials science and condensed matter physics
- Dates
- 23-26 Sep 2008
- Place
- Chisinau (Moldova, Republic of)
INIS
- Country of Publication
- Moldova, Republic of
- Country of Input or Organization
- Moldova, Republic of
- INIS RN
- 40070012
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FULLERENES; HETEROJUNCTIONS; OPTICAL PROPERTIES; PHOTOVOLTAIC EFFECT; RECTIFIERS; SCANNING ELECTRON MICROSCOPY; SILICON; SUBLIMATION; TELLURIUM; THIN FILMS; TUNNELING
- Descriptors DEC
- CARBON; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ELEMENTS; EQUIPMENT; EVAPORATION; FILMS; MICROSCOPY; NONMETALS; PHASE TRANSFORMATIONS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS
Optional Information
- Notes
- 2 figs.